| 摘要 |
PURPOSE:To obtain a practical PV element by coating a substrate of B face of a specified face orientation with a diffusion mask film and then performing thermal treatment. CONSTITUTION:A face orientation (211) B face is selected as a substrate 11, thermal CVD temperature is set below 250 deg.C, and an SiO2 film 12 film is selected to 1000-2000Angstrom as a practical range. Then, a substrate 22 after coating SiO2 is selected to the diffusion temperature or up to 500 deg.C in inactive gas or vacuum, and then thermal treatment is performed for 5 minutes or more. As a result, an InSb planar PV element is formed by the mask diffusion method of Cd with an SiO2 film 12 which is the easiest as a semiconductor process being as a mask material. |
