发明名称 Simplified method for repair of high density interconnect circuits
摘要 A simplified method of gaining access to, for the purpose of replacing, a defective integrated circuit chip situated in a high density interconnect (HDI) circuit (10) comprises heating the HDI circuit to a temperature at which the peel strength of an adhesive (16) bonding a polymer overlay layer (18) to the tops of integrated circuit chips (4, 6, and 8) positioned on a substrate (12) is reduced. The polymer overlay layer, which may comprise one or multiple layers, is then peeled from the chips. The adhesive is present in sufficient quantity to protect the chips. The adhesive is then dissolved by subjecting the substrate to different solvents of successively lower solubility for the adhesive. Metal divots (34) left on chip pads (36) are removed by selectively etching copper in the presence of ultrasonic agitation. The entire circuit is finally subjected to a high pressure spray to remove any particulate remaining on the chips, so that the defective chip may be readily replaced without damaging or contaminating the HDI circuit.
申请公布号 US4878991(A) 申请公布日期 1989.11.07
申请号 US19880283095 申请日期 1988.12.12
申请人 GENERAL ELECTRIC COMPANY 发明人 EICHELBERGER, CHARLES W.;WOJNAROWSKI, ROBERT J.
分类号 H01L21/48;H01L21/60;H01L23/538 主分类号 H01L21/48
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