发明名称 SALIENT ELECTRODE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To improve both bonding strength and reliability by providing a salient electrode whose upper surface is flat on a metal film around an opening of a protective film of a metal pad. CONSTITUTION:A metal pad 2 is provided on an SiO2 film 1a of an Si substrate and is covered with a protective film 3 and then opened. An Au film 5 is bonded to both the opening 4 and the protective film 3a around the opening 4. Except for a resultant recess 5a, a salient electrode 16 is formed on the flat periphery part of the Au film 5 over the protective film 3a. According to the constitution, in which the salient electrode is arranged on the flat part of the Au film 5, the upper surface of the electrode is also made flat. This allows a large bonding strength and reliability to be obtained when the salient electrode 16 is bonded to the corresponding metal surface.
申请公布号 JPH01276748(A) 申请公布日期 1989.11.07
申请号 JP19880106183 申请日期 1988.04.28
申请人 FUJI ELECTRIC CO LTD 发明人 SHIRAHATA HISASHI
分类号 H01L21/60;H01L21/321 主分类号 H01L21/60
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