发明名称 PRODUCTION OF SILICON NITRIDE-SILICON CARBIDE COMBINED SINTERED BODY
摘要 PURPOSE:To obtain an Si3N4-SiC combined sintered body having high density, dense fine structure, and improved strength, fracture toughness, and oxidation resistance, by sintering a mixture consisting of specified spherical amorphous powder with a sintering aid in a nonoxidizing atmosphere under pressure. CONSTITUTION:Fine powder obtd. by a gaseous phase reaction of an organosilicon compd.(e.g. hexamethyl disilazane) contg. no halogen in nonoxidizing atmosphere contg. NH3, is heat-treated in nonoxidizing gaseous atmosphere at 1,000-1,400 deg.C, and spherical amorphous powder having <=1mum average particle size and consisting of Si, C, N and O of 10.5-24.0wt.% C content is obtd. The amorphous powder is mixed with 1-15wt.% sintering aid(e.g. MgO), and sintered under pressure at 1,750-1,850 deg.C for 0.5-3hr under 200-400kg/cm<2> in nonoxidizing gas atmosphere, and sintering particle consists of primarily beta-Si3N4 and 35-80wt.% beta-SiC. Thus, an Si3N4-SiC sintered body having <=1mum particle size of uniformly dispersed Si3N4 particles and SiC particles, and having dense and fine structure, is obtd.
申请公布号 JPH01275470(A) 申请公布日期 1989.11.06
申请号 JP19880103770 申请日期 1988.04.28
申请人 MITSUBISHI GAS CHEM CO INC 发明人 ISAKI HIROMASA;KAWAKAMI TADAMASA;YAKIYOU KOUICHI;ANDO KAZUHIRO
分类号 C04B35/565;C04B35/575;C04B35/584;C04B35/593 主分类号 C04B35/565
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