SEMICONDUCTOR RADIATION DIODE MANUFACTURING METHOD

摘要

The method relates to the manufacturing of a surface luminescence diode, esp. Burrus type luminescence diode. The method consists of; forming the first insulation film on a semiconductor substrate and making window to form lens type pattern; etching the substrate; forming a transmitive layer, an active layer, and a cap layer on the lens type pattern by epitaxial growth and growing an insulation layer on it; etching the growth layer and forming an electrode.