| 发明名称 |
Method for separating integrated circuits formed on a substrate. |
| 摘要 |
<p>A method for separating chips formed on a silicon substrate is provided which uses a combination of reactive ion etching techniques combined with orientation etching to yield integrated chips having edges which can be more precisely butted together to form large area arrays.</p> |
| 申请公布号 |
EP0339912(A2) |
申请公布日期 |
1989.11.02 |
| 申请号 |
EP19890304072 |
申请日期 |
1989.04.24 |
| 申请人 |
XEROX CORPORATION |
发明人 |
DRAKE, DONALD J.;HAWKINS, WILLIAM G.;CAMPANELLI, MICHAEL R. |
| 分类号 |
H01L21/302;B41J2/16;H01L21/301;H01L21/306;H01L29/06 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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