Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.
申请公布号
WO8907341(A3)
申请公布日期
1989.11.02
申请号
WO1989US00283
申请日期
1989.01.23
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人
HOLLIS, MARK, A.;GOODHUE, WILLIAM, D.;NICHOLS, KIRBY, B.;BERGERON, NORMAND, J., JR.
