| 摘要 |
<p>A new genus of electronic devices, wherein at least two closely adjacent potential wells (e.g. islands 10, 12 of GaAs in an AlGaAs lattice 11) are made small enough that at least two components of momentum of carriers within the wells are discretely quantized. This means that, when the bias between the wells is adjusted to align energy levels of the two wells, tunneling will occur very rapidly, whereas when energy levels are not aligned, tunneling will be greatly reduced. This high-gain mechanism leads to useful electronic device functions.</p> |
