| 摘要 |
<p>A Structured Base Hot Electron Transistor (SBHET) using hot electrons with extended mean free paths (due to suppressed intermini-band scattering) and increased trans-base velocities enables the base width to be lengthened (thus reducing base resistance) and device working temperatures to be increased. The SBHET has a superlattice base (4) configured to provide a built-in field and at least two conduction band mini-bands below the threshold energy for inter-valley scattering. Electrons are injected from the emitter (5, 6) into the second or higher mini-band of the superlattice base - where they are accelerated to the collector (3, 2, 1) (which exhibits normal reverse bias junction characteristics) due to the superlattice built-in field. Methods of providing a built-in field in the superlattice base (4) are to progressively dope the superlattice from one end to the other or to vary the dimension or composition of the superlattice layers. The SBHET can be a unipolar device as well as a bipolar device depending on the conductivity type of the base region (4).</p> |
