| 摘要 |
PURPOSE:To prevent a high melting point metal siliside from peeling off a polycrystalline silicon, by forming a laminated gate electrode consisting of the polycrystalline silicon and the high melting point metal siliside, the top layer of which is of a polycrystalline silicon. CONSTITUTION:The laminated gate electrode of an FET consists of polycrystalline silicon 3 and high melting point metal siliside 4 accumulated thereon. Insulating side walls 10 are formed on the side faces of said gate electrode and an insulating film 6 and a conductive layer 9 are accumulated in this order on said gate electrode to construct a capacitor having the conductive layer 9 acting as one of the electrodes and the gate electrode. This maintains a low wiring resistance of the gate electrode and protects the high melting point metal siliside from direct anisotropic dry etching for forming a side wall to prevent the high melting point metal siliside from peeling off the polycrystalline silicon. |
