| 摘要 |
PURPOSE:To control gate length by the thickness of an applied gate metal by forming a second insulating film only on the side face of a first insulating film, shaping the gate metal only on the side face of the second insulating film and using the gate metal as a gate. CONSTITUTION:An active layer 2 and a first insulating film 3 are formed onto a semiconductor substrate 1, and the first insulating film 3 is etched. A second insulating film 4 is applied, and left as the sidewall of the first insulating film 3 through anisotropic etching. A Schottky gate metal 5 is grown on the whole surface, and left only on the sidewall of the first insulating film 4 through anisotropic etching, thus shaping a gate 5. The gate length of the gate 5 is equalized approximately to the thickness of the Schottky gate metal. Only the first insulating film 3 is removed, and a third insulating film 6 is applied onto the whole surface, and left on both side faces of the gate 5, etc., through anisotropic etching. An impurity is implanted to the semiconductor substrate in high concentration, and a drain 7 and a source 8 are formed. |
