发明名称 MOSFET turn-on/off circuit
摘要 A dual current source MOSFET turn-on/off circuit includes a high gain PNP transistor as a turn-off current source and a high gain NPN transistor as a turn-on current source for a P-channel MOSFET. A switch in the base circuit of the NPN transistor turns on the NPN transistor current source which overpowers the PNP transistor current source. The net current charges the MOSFET gate-to-source capacitance which, upon reaching a threshold voltage, turns the MOSFET on. When the switch is opened, the PNP transistor current source discharges the gate-to-source capacitance, turning off the MOSFET. The circuit provides almost constant power dissipation independent of input voltage and a constant turn-on/off time independent of input voltage.
申请公布号 US4877982(A) 申请公布日期 1989.10.31
申请号 US19890299508 申请日期 1989.01.23
申请人 HONEYWELL INC. 发明人 WALKER, CHARLES S.
分类号 H02M3/155;H03K17/0412;H03K17/687 主分类号 H02M3/155
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