| 摘要 |
A non-single-crystal semiconductor photoelectric conversion device has a laminate member composed of a pair of first and second PIN structures and a transparent conductive layer interposed therebetween, the first PIN structure being disposed on the side to which light is incident. I-type layers of the first and second PIN structures have the same semiconductor component, and the transparent conductive layer consists of compound of metal and the same material as that for a P or N-type layer of the first or second PIN structure. The I-type layer of the first PIN structure is larger in the optical energy gap and in the amount of recombination center neutralizer contained but lower in the degree of crystallization than the I-type layer of the second PIN structure. In the case of forming the laminate member, a PIN structure corresponding to the first (or second) PIN structure of the laminate member is formed by a known CVD method, then a transparent conductive layer corresponding to the transparent conductive layer is deposited on the PIN structure and then heat annealed, and then other PIN structure corresponding to the second (or first) PIN structure is formed the CVD method, followed by crystallizing its I-type.
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