Method for contact between two conductive or semi-conductive layers deposited on a substrate

摘要

A method of contact between two conductive or semiconductive layers deposited on a substrate is disclosed. The method comprises the following steps: the depositing and etching of a first layer, the depositing of an insulating layer under pressure and temperature conditions such that the insulating layer is thinned at the edges of the etched zones of the first layer as compared with the thickness on the surface of the substrate and on the surfaces of the etched zones of the first layer, the chemical etching of the insulating layer on a thickness at least equal to the thickness of the thinned layer but substantially smaller than the thickness elsewhere, the depositing and etching of the second conductive or semiconductive layer under pressure and temperature conditions leading to high covering capacity.