发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To obtain a high-speed decoder circuit in which current consumption is reduced by detecting the change of the potential of an output, applying a large quantity of current only to a gate switched either from a selected state to a non-selected state or from the non-selected state to the selected state, and applying only a constant current to a non-selected gate. CONSTITUTION:When the gate of a word line W1 is selected, the word line W1 becomes 'H', word lines W2-Wn become 'L', the base potential of a transistor (Tr) Q61 becomes 'H', the base potentials of Tr Q62-Q6n become 'L', the Tr Q61 is turned ON, the Tr Q62-Q6n are turned OFF, and a constant current ICOM is applied only to the Tr Q61. When the word line W1 changes from 'H' to 'L', and when the word line Wn changes from 'L' to 'H', the fall of the word line W1 is faster than its conventional fall expressed with a dotted line, and when the word lines W1 and Wn are inverted, the rise of the word line Wn becomes faster than its conventional rise, and the constant current ICOM is applied to the side of a gate (n). Thus, the high-speed decoder circuit can be obtained, in which the current consumption is reduced.
申请公布号 JPH01271992(A) 申请公布日期 1989.10.31
申请号 JP19880100520 申请日期 1988.04.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAEDA YASUNORI
分类号 G11C11/415;G11C11/34;H01L21/8222;H01L21/8229;H01L27/08;H01L27/082;H01L27/10;H01L27/102;H03K19/00;H03M7/00 主分类号 G11C11/415
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