发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To manufacture various packages having excellent heat-dissipating properties and high reliability by using an aluminum nitride substrate capable of forming a multilayer substrate through a green sheet method as a package base and mounting and sealing a cap composed of aluminum nitride or mullite onto the base by a sealing medium. CONSTITUTION:A package 1 consists of AlN, AlN powder is kneaded with a liquefied binder, CaCO3, etc., and a green sheet is manufactured, and a required number of the green sheets are superposed, and contact-bonded and sintered. Through-holes are bored to the green sheets by a press, patterns are printed, and internal wirings 2 conducting superposition sintering can be shaped. Multilayer thin-film circuits are formed by an insulating layer 3A and thin-film conductors 3B on the surface of a base 1 in a thin-film multilayer interconnection 3. An AlN film and a polyimide synthetic resin may also be used as the insulating layer 3A, but it is preferable that thin film diamond through a vapor phase method is employed. A cap made up of AlN or mullite is fitted, thus eliminating the need for a water cooling jacket on the cap.</p>
申请公布号 JPH01272140(A) 申请公布日期 1989.10.31
申请号 JP19880100309 申请日期 1988.04.25
申请人 HITACHI LTD 发明人 EMOTO YOSHIAKI;OTSUKA KANJI;YATSUNO KOMEI;KURIHARA YASUTOSHI;MIWA TAKASHI;KURODA SHIGEO;OKUYA KEN;YAMADA TAKEO;SAWARA KUNIZO;KOBAYASHI TSUNEO;SATO TOSHIHIKO;SHIRAI MASAYUKI
分类号 H01L23/538;H01L23/08;H01L23/14;H01L23/15;H01L23/52 主分类号 H01L23/538
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