Method of fabricating a trench capacitor cell for a semiconductor memory device

摘要

A novel method of fabricating a trench capacitor cell for a semiconductor device is disclosed. The method comprises: forming a trench in a semiconductor substrate; forming a first insulating layer on the side and bottom walls of the trench and forming a first conductor layer on the first insulating layer; filling the trench with a second insulating layer; forming a mask coating over the upper surface of the substrate using a material that can be removed by etching for the first conductor layer; etching selectively the portion of the mask coating over the second insulating layer within the trench; removing the second insulating layer out of the trench; etching the first conductor layer from the bottom of the trench as well as the mask coating; and forming a third insulating layer on the first conductor layer in the trench and fill the trench with a second conductor layer.