发明名称 |
SEMICONDUCTOR DEVICE FOR GENERATING AN ELECTRON BEAM |
摘要 |
<p>PHN11.670 21 16.6.1986 Semiconductor device for generating an electron beam. By providing in a reverse biased junction cathode an intrinsic semiconductor region (5) between the n-type surface region (3) and the p-type zone (4), a maximum field is present over the intrinsic region (5) in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, whilst in addition electrons to be emitted at a sufficient energy are generated by means of tunnelling.</p> |
申请公布号 |
CA1262578(A) |
申请公布日期 |
1989.10.31 |
申请号 |
CA19870531879 |
申请日期 |
1987.03.12 |
申请人 |
N.V.PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
VAN GORKOM, GERARDUS G.P.;HOEBERECHTS, ARTHUR M.E. |
分类号 |
H01J1/30;H01J1/308;H01J29/04;H01J31/12;H01J31/38;H01J37/073;H01L21/027;(IPC1-7):H01L33/00 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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