| 摘要 |
<p>PURPOSE:To make specific reference voltage unnecessary and to execute reading at a high speed even when an integrated degree becomes higher by providing a speed change setting means to make the changing speeds of respective output voltages of first and second current-voltage converting means different. CONSTITUTION:When a signal '1' is stored in a memory transistor TrQm, and when the potential difference exists between nodes N3 and N6, a differential amplifier 73 is activated by giving a low level signal S0 to the amplifier 73, and the signal '1' is read at a high speed. Further, when a signal '0' is stored in the memory TrQm, a bit line 6a is not charged, and the level of the node N3 becomes a low level. On the other hand, the voltage (the reference voltage) of the node N6 is gradually heightened, and a reading operation for the signal '0' can be executed at a high speed by amplifying the voltage difference between the nodes N3 and N6 by the differential amplifier 73.</p> |
