| 摘要 |
<p>PURPOSE:To prevent photoresist from being peeled when a protection insulating layer is etched by coupling a 1st protection insulating layer formed at a transistor(TR) part, and a 2nd protection insulating layer formed at the crossing part of gate wiring or a 4th protection insulating layer formed below its source wiring by a 3rd protection insulating layer. CONSTITUTION:The 1st protection insulating layer 1 formed at the TR part and the 2nd protection insulating layer 2 formed at the intersection part of the gate wiring 6 and source wiring 5 are coupled with each other by the 3rd protection insulating layer 3. Further, the 1st protection insulating layer 1 formed at the TR part and the 4th protection insulating layer 4 formed below the source wiring 5 are coupled with each other by the 3rd protection insulating layer 3. Consequently, the protection insulating layers becomes large in overall area, so when the protection insulating layers are etched, the resist which is used as a mask is reduced in peeling greatly.</p> |
