| 摘要 |
The circuit is to correct a drop of potential due to the junction leakage and to set the mode potential at a proper level by grounding the node cascaded to a capacitor of a voltage detection circuit. A switching transistor (TRQ3) of a voltage control circuit (B) for an EEPROM forming a voltage detection circuit, and a nonvolatile RAM etc., are kept on excepting for a period when a signal W/E is set at a high level in a write mode. Then a connection node (N1) between cascade capacitors is always kept at ground potential. Therefare if the electric charge is injected by the junction leakage caused when the high potential voltage (IVPo) is set at zero, the electric charge is discharged through the (TRQ3).
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