| 摘要 |
PURPOSE:To improve the limit of resolution determined by an exposing machine and a resist as well as to contrive accomplishment of microscopic patternization by a method wherein the surface layer of a resist pattern is hardened using ultraviolet rays or far ultraviolet rays, and the resist pattern is dissolved by anisotropic etching and a solvent, leaving the hard layer only on the side face of the resist pattern. CONSTITUTION:When ultraviolet rays are projected on the whole surface of the pattern on a developed resist film 2, the surface layer of the resist film 2 is hardened. Moreover, anisotropic etching is conducted in the direction vertical to the surface of a substrate 1 by oxygenous plasma using a reactive ion- etching device, and the hard layer 21 on the upper surface of the resist film 2 is removed. Subsequently, when the resist film 2 is dissolved with in organic solvent, the non-hardened resist film only is dissolved, and the hardened layer 2 on the side face of the resist film is left. Accordingly, the pattern on the microscopic resist film 21 corresponding to the hardened depth can be generated. |
