发明名称 |
PULSE GENERATOR OF MEMORY DEVICE |
摘要 |
The pulse generator for providing control pulse to pre-charge the bit line of SRAM includes a latch circuit for providing the start/stop pulses for charging to the bit line, a gate circuit for maintaining the high level at a start time of pre-charge and the low level at a transfer time to the second edge, a delay circuit for delaying for a certain time, a buffer for providing a logic signal, and a charger for charging the delay circuit and preventing the misoperation of the pulse width of the pre-charge.
|
申请公布号 |
KR890004206(B1) |
申请公布日期 |
1989.10.27 |
申请号 |
KR19860011077 |
申请日期 |
1986.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO.,LTD. |
发明人 |
BYON, HYUN-KUN;CHONG, TAE-SUNG;HWANG, SANG-KI |
分类号 |
H03K3/26;(IPC1-7):H03K3/26 |
主分类号 |
H03K3/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|