发明名称 PULSE GENERATOR OF MEMORY DEVICE
摘要 The pulse generator for providing control pulse to pre-charge the bit line of SRAM includes a latch circuit for providing the start/stop pulses for charging to the bit line, a gate circuit for maintaining the high level at a start time of pre-charge and the low level at a transfer time to the second edge, a delay circuit for delaying for a certain time, a buffer for providing a logic signal, and a charger for charging the delay circuit and preventing the misoperation of the pulse width of the pre-charge.
申请公布号 KR890004206(B1) 申请公布日期 1989.10.27
申请号 KR19860011077 申请日期 1986.12.22
申请人 SAMSUNG ELECTRONICS CO.,LTD. 发明人 BYON, HYUN-KUN;CHONG, TAE-SUNG;HWANG, SANG-KI
分类号 H03K3/26;(IPC1-7):H03K3/26 主分类号 H03K3/26
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