| 发明名称 |
PROCEDE DE COMMANDE DE L'ETAT DE CONDUCTION D'UN TRANSISTOR MOS ET CIRCUIT INTEGRE METTANT EN OEUVRE LE PROCEDE |
| 摘要 |
The conduction state of a MOS transistor 11 is definitively controlled with a laser beam 21 by forming an electrical connection 22 between the gate 16 and the underlying portion d of the source 14 or drain 15 region. The invention applies in particular to the correcting of integrated circuits (reconfiguration, redundancy) and to the programming of integrated read-only memories. <IMAGE> |
| 申请公布号 |
FR2617637(B1) |
申请公布日期 |
1989.10.27 |
| 申请号 |
FR19870009381 |
申请日期 |
1987.07.02 |
| 申请人 |
BULL SA |
发明人 |
ALAIN BOUDOU;MARIE-FRANCOISE BONNAL;MARTINE ROUILLON-MARTIN |
| 分类号 |
H01L27/112;H01L21/8246;H01L23/525;H01L29/78;(IPC1-7):H01L21/74;H01L21/268;G11C17/00 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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