| 摘要 |
The invention relates to electrically programmable memories, and especially memories known by the abbreviations "EPROM", "EEPROM", "FLASH-EE-PROM". In order to take into account the loss of charge from the floating-gate transistors over time, it is proposed to read the memories while comparing the output current from the cells not only with a reference value IR defining the boundary between programmed cells and non-programmed cells, but also with a second reference value IR1. If the output current is between these two values (in other words if it is too close to IR) a complementary programming of the cell is carried out. <IMAGE>
|
