发明名称 |
TEMPERATURE COMPENSATED SEMICONDUCTOR-TYPE PRESSURE TRANSDUCER |
摘要 |
A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit. |
申请公布号 |
DE3479831(D1) |
申请公布日期 |
1989.10.26 |
申请号 |
DE19843479831 |
申请日期 |
1984.04.04 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMADA, KAZUJI;SATO, HIDEO;KAWAKAMI, KANJI;KATO, KAZUO;SASAYAMA, TAKAO |
分类号 |
G01R27/02;G01B7/16;G01D3/028;G01L1/22;G01L9/00;G01L9/04;G01L9/06;G01L19/04;(IPC1-7):G01L9/00 |
主分类号 |
G01R27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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