发明名称 SEMICONDUCTOR CONTROL CIRCUIT
摘要 PURPOSE:To improve time limit characteristic and to simplify a protective circuit by selecting and setting a control signal from actually measured characteristics of semiconductor control elements corresponding to the load. CONSTITUTION:Semiconductor control elements, i.e. IGBT(Insulated Gate Bipolar Transistor) 1a-1f convert power fed from a DC power source into AC power and drives a motor 13. Relation between collector-emitter voltage VCE of the IGBT1a-1f and the collector current IC is previously measured with the gate voltage VGE being employed as a parameter, and the load current IC(max) for the maximum load is obtained previously. Then a current larger by IC than the load current IC(max) is obtained and a gate voltage VGE where the voltage VCE increases abruptly is obtained and employed for control of the IGBT1a-1f. By such arrangement, load current can be limited.
申请公布号 JPH01268424(A) 申请公布日期 1989.10.26
申请号 JP19880096300 申请日期 1988.04.19
申请人 HITACHI LTD 发明人 KOGA KENJI;MUSHA SHUJI
分类号 H02H9/02;H02M1/00;H03K17/08 主分类号 H02H9/02
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