| 摘要 |
Use of a photoconductive photoresist complex minimises charge buildup resulting from high electric potential on an integrated circuit process intermediate (chip or wafer) in the processing environment during manufacture of closely packed integrated circuits. The photoconductive photoresist layer (2) is connected during high voltage processing operations to a drain electrode (3) at a reference potential. The photoresistivity complexing agent, which may be a common ketone photoresist such as AZ1350, AZ1450J, or AZ1350SF, is compounded with a photoconductivity complexing agent, a low potential amine, diazobicyclooctane (DABCO) or other low ionisation potential primary, secondary or tertiary amine. During high voltage operations, the integrated circuit process intermediate is flooded with light at a wavelength eliciting photoconductivity, but producing no photoresistivity effects. The charge passes to the cathode through the normal means of wafer attachment. |
