| 发明名称 |
Ferroelectric retention method. |
| 摘要 |
<p>Polarization retention of a ferroelectric material in a memory cell is improved by open circuiting the write pulse. The depolarizing field is reduced by allowing charge to dissipate through the ferroelectric material, causing a polarizing field.</p> |
| 申请公布号 |
EP0338158(A2) |
申请公布日期 |
1989.10.25 |
| 申请号 |
EP19880308769 |
申请日期 |
1988.09.21 |
| 申请人 |
RAMTRON CORPORATION |
发明人 |
EATON, SHEFFIELD S., JR.;BUTLER, DOUGLAS;PARRIS, MICHAEL |
| 分类号 |
G11C11/41;G11C11/22;G11C14/00;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/105;H01L27/108;H01L29/788;H01L29/792 |
主分类号 |
G11C11/41 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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