| 摘要 |
PURPOSE:To enable surer light shielding without entailing complication of process by providing a light shielding film to at least the region on the rear surface of a substrate opposite to the active region of a semiconductor element. CONSTITUTION:A polysilicon layer deposited on the rear surface of the glass substrate 1 is patterned to the same size as the size of the island-shaped polysilicon consisting of a source-drain layer 2 and a channel layer 3 and is left as the rear surface light shielding film 11 at the time of forming the source- drain layer 2, the channel layer 3 and the gate polysilicon layer 6. The off current of a thin-film transistor is thereby decreased and the light shielding film 11 of the size to maximize both the opening rate and light shieldability is formed. Further, the simultaneous deposition of said film at the time of forming the polysilicon on the front surface is possible if the polysilicon layer is used for the light shielding film 11 and, therefore, the stage is simplified. |
