| 摘要 |
<p>The photodetectors in question include a layer of an intrinsic semiconductor as the main detection layer. They are intended for the detection of light in a narrow band of wavelengths or of monochromatic light. Unlike the process normally carried out, the intrinsic semiconductor is doped with a material tending to increase the gap of the semiconductor and not to reduce it. An improvement in the sensitivity is observed when the detector is used in an appropriate narrow band of wavelengths. In particular, this is the case if an intrinsic layer of hydrogenated amorphous silicon is doped with carbon and if it is desired to detect visible green radiation at around 550 nanometres. <IMAGE></p> |
