| 摘要 |
PURPOSE:To suppress the effect of a FET and to obtain a stable resistance value, by connecting a specified first diffused resistor and a specified second diffused resistor in parallel, commonly connecting one side of their terminals in common, and electrically isolating the other side of the terminals so that the second diffused resistor is not forward-biased with respect to the first diffused resistor. CONSTITUTION:A first diffused resistor comprising a first conductivity type semiconductor region 11 which is formed in a second conductivity type semiconductor region 12 in a first conductivity semiconductor region 13 is connected in parallel with a second diffused resistor comprising the second conductivity type semiconductor region 12. The terminals on one-side parts of said first and second diffused resistors are commonly connected. The terminals on the other sides of the first and second diffused resistors are electrically isolated so that the second diffused resistor is not forward- biased with respect to the first diffused resistor. For example, an insulating film 14 covers the surface of the P-type silicon substrate 13 on which the N<-> type well regions 12 and the P-type diffused region 11 are formed. Electrodes 21, 22 and 24 are provided at opening parts which are provided in the insulating film 14 so that said electrodes are used as the terminals of the diffused resistors. A buffer 15 is connected between the electrode 22 and the electrode 24. |
