| 发明名称 |
High temperature SiC thin film thermistor. |
| 摘要 |
<p>A thin film thermistor which includes an insulating substrate (21A), a Au-Pt fired electrode film (22A) in a particular comb-shaped pattern on the insulating substrate, with a little amount of oxide being added in the electrode film (22A) and a SiC thin film (23A) which is formed by sputtering on the substrate (21A) on which the electrode film (22A) is previously formed.</p> |
| 申请公布号 |
EP0338522(A2) |
申请公布日期 |
1989.10.25 |
| 申请号 |
EP19890106962 |
申请日期 |
1989.04.19 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAGAI, TAKESHI;ITOH, MASAHIKO |
| 分类号 |
H01C7/04;H01C1/14;H01C7/00;H01C17/12 |
主分类号 |
H01C7/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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