| 摘要 |
PURPOSE:To inhibit decrease of grafting degree in an X ray lithography of a resist wherein radiation graft polymn. is utilized, when the resist is exposed to atmospheric air, by heating the resist after coating it on a base body. CONSTITUTION:Poly(benzyl methacrylate) 2 is spin-coated on an Si base plate 1, then heated at 140 deg.C for 1hr in vacuum. A wafer is transported into an electron beam drawing device, and after it is exposed to electron beams 3 having 20keV energy, the wafer is discharged from the electron beam drawing device, and subjected to graft polymn. in a reaction chamber by feeding it to a graft polymn. device. 10min is required for the transfer of the wafer between the two devices. During this time, the resist is exposed to atmospheric air. However, if the coated film is once heated particularly at a temp. higher than a glass transition temp., the film becomes denser and the movement of molecules is retarded, permitting stable presence of peroxide radicals formed by reactions between radicals generated by the radiant rays and atmospheric oxygen. Thus, decrease of grafting degree due to exposure of the resist to atmospheric air is inhibited. |
