| 摘要 |
<p>PURPOSE:To obtain the thin-film transistor which has no fluctuation in parasitic capacity by providing two pieces of drain electrodes wired in parallel to a prescribed length at a prescribed spaced interval and prescribed line width on an insulating substrate and source electrodes wired to a prescribed length at a prescribed line width. CONSTITUTION:This thin-film transistor has two pieces of the drain electrodes 102 wire din parallel to the prescribed length at the prescribed line width, the source electrode 103 wired to the prescribed length at the prescribed line width between the two drain electrodes 102, a semiconductor layer 104 provided in the direction intersecting with the longitudinal direction of the two drain electrodes 102 and the source electrode 103, a gate insulating film 105 which covers the drain electrodes 102, the source electrode 103 and the semiconductor layer 104, and a gate electrode 106 provided via the gate insulating film 105. The parasitic capacity of the thin-film TR is thereby kept always constant without being affected by a pattern deviation and the specified capacity of a piece of a source wiring 108 is obtd. as well. Namely, the delay time of signals does not fluctuate with each of the source wirings 108 and the liquid crystal display having the display quality uniform over a large screen and high image quality is obtd.</p> |
