Method for forming a photoresist pattern and apparatus applicable with said method.

摘要

With the method pattern elements with predetermined wall profiles and/or lateral shapes differing from the shapes of the respective pattern elements in the used irradiation mask are formed in a photoresist layer. The method comprises a modification of the conventional photo- lithographic process where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image respectively in a continuous mode and/or in steps during exposure. The apparatus comprises means for shifting a substrate relative to a mask into the x- and/or the y-direction or means between the mask and the substrate to shift the path of the beam relative to the mask and controls for said means. The method - especially in connection with the apparatus - allows to form reproducibly photoresist patterns with a great variety of differently formed wall profiles and/or lateral shapes. Using the method photoresist patterns can be flexibly adapted to many applications.