| 摘要 |
<p>PURPOSE:To decrease the size defect by overexposure by etching away the metallic film on a substrate to a mid-point in a 1st stage and etching away the metallic film removed to the mid-point in the 2nd stage. CONSTITUTION:A 1st resist film 13 is applied on the metallic film 12 on the substrate and this metallic film 12 is etched away to the mid-point after exposing and developing in the 1st stage. The 2nd resist film 16 is applied thereon and the metallic film 12 removed to the mid-point is etched away after exposing and developing in the 2nd stage. Since the patterns of the metallic film 12 removed to the mid-point by the etching in the 2nd stage are formed in such a manner, the exposing light is shielded by the patterns of the metallic film 12 formed first even if the overexposure arises in the 2nd stage. The defects of the size, etc., by the overexposure are thereby eliminated.</p> |
