发明名称 MOSFET SELECTION CIRCUIT
摘要 PURPOSE:To reduce chip size by constituting a MOSFET with a specific channel width by selectively synthesizing a MOSFET with each specific channel width. CONSTITUTION:First - fifth MOSFET Q1 to Q5 have channel width W1 to W5 each and the drain and gate are commonly connected to the first terminal T1. K (k=1 to 5) MOSFETs Qk1 to Qkk for controlling the kth one have the channel width of minimum dimensions, drain is connected to each source of 1st - kth MOSFETs Q1 to Qk, source is commonly connected to the second terminal T2, the kth control signal Vk is fed to the gate to turn it on, and the source of MOSFETs Q1 to Qk is connected to the second terminal T2 for synthesizing these. It enables synthesis to be made between T1 and T2 to obtain a MOSFET with a channel width W indicated by the expression I. The chip size may be thereby minimized.
申请公布号 JPH01266768(A) 申请公布日期 1989.10.24
申请号 JP19880095907 申请日期 1988.04.18
申请人 NEC CORP 发明人 DAIMON YOSHIAKI
分类号 H01L29/78;H01L21/82;H01L27/118;H03K17/693 主分类号 H01L29/78
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