发明名称 |
Radiation-induced substrate photo-current compensation apparatus |
摘要 |
A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor.
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申请公布号 |
US4876583(A) |
申请公布日期 |
1989.10.24 |
申请号 |
US19880171494 |
申请日期 |
1988.03.21 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
HUGHES, ARLEN J.;STRAHAN, VIRGIL H. |
分类号 |
H01L27/12;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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