发明名称 Radiation-induced substrate photo-current compensation apparatus
摘要 A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor.
申请公布号 US4876583(A) 申请公布日期 1989.10.24
申请号 US19880171494 申请日期 1988.03.21
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE 发明人 HUGHES, ARLEN J.;STRAHAN, VIRGIL H.
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
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