| 摘要 |
An integrated circuit device including a substrate (2), power supply buses (VDD, VSS), and a number of terminal pads (1) has an electrostatic discharge protection circuit associated with one of its terminal pads (1). The protection circuit comprises a diode (D1) directly connected between the pad (1) and one of the power supply buses (VDD, VSS), a punchthrough transistor (TR1) directly connected to the other one of the power supply buses (VDD, VSS) and a resistive path (R1) connecting the pad (1) to the remainder of the integrated circuit. Static charges applied to the pad (1) are transmitted to the one or the other power supply bus (VDD, VSS) via the diode (D1) or the punchthrough transistor (TR1) rather than being transmitted to the remainder of the integrated circuit. In a preferred embodiment the diode (D1) and transistor (TR1) are formed by the substrate (2) in combination with diffusion regions of a different conductivity to the substrate (2) underlying the pad (1) and further diffusion regions (5, 8) formed along the sides of the pad (1).
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