| 摘要 |
PURPOSE:To obtain an all-environment type photoconductive material superior in optical fatigue resistance and durability, by forming the specified first amorphous layer and the second amorphous layer contg. Si, C, and halogen on a substrate. CONSTITUTION:A photoconductive material 100 is obtained by forming on a substrate 101 the first photoconductive amorphous layer 102 contg. Si as a main component and H or halogen, consisting of the 3-5,000nm thick second layer region 103 and the 0.2-95mum thick first layer 104 contg. O and the second amorphous layer contg. Si, C, and halogen. The region 103 contains an element of group V of the periodic table in a distribution of concn. C held at a constant concn. C1 in the (t) range of tB-t1, where tB is an interface position in contact with the surface of the substrate 101, and gradually decreasing from a concn. C2 to a concn. C3 in the (t) range of t1-tT, where tT is an interface position in contact with the region 104, as shown in the graph. |
