| 摘要 |
PURPOSE:To prevent the hydrogen diffusion from occurring thereby preventing the characteristics of an active element and a passive element from changing by forming a titanium film as a hydrogen diffusion preventive film from the active element or the passive element. CONSTITUTION:An interlayer insulating film 3 such as PSG film etc., is formed on the whole surface of an aluminum wiring layer 16. A titanium film 1 as a hydrogen diffusion preventive film is formed on the upper part of the insulating film 3. The hydrogen diffusion from a plasma silicon nitride film 2 is prevented from occurring by the titanium film 1 to prevent the unfavorable effect on a high resistance loaded film 14 and a MOS transistor from being achieved. Through these procedures, the hydrogen diffusion can be prevented effectively from occurring thereby preventing the characteristics of an active element and a passive element from changing. |
