| 摘要 |
<p>PURPOSE:To prevent a semiconductor device from breaking by a method wherein a conductive layer of an electric resistance value of 10<3>-10<10>OMEGA-cm is formed at least on the surface of a transport part directly in contact with a semiconductor device to immediately discharge any charged static electricity corresponding to the electric resistance value. CONSTITUTION:A conductive layer 8 is formed on the surface of a transport part 4 directly in contact with a semiconductor device 1. The conductive layer 8 is made of a conductive member in electric resistance value of 10<3>-10<10>OMEGA-cm. Even if the device 1 charged with any static electricity comes into direct contact with the part 4, the static electricity will not be abruptly discharged but to be immediately discharged corresponding to the electric resistance value. Through these procedures, the inner circuit of the device 1 can be protected from static breakdown.</p> |
