| 摘要 |
PURPOSE:To achieve a high speed and a high density by a method wherein a collector region of a second conductivity type is formed of a partially thick insulating film, a base region whose impurity concentration is higher than that of the collector is formed on the opposite side and an emitter region of the second conductivity type is formed at a concentration which is higher than that. CONSTITUTION:An SiO2 film 9, an SiN film 10 and an SiO2 film 8 are formed on the surface of an N-type epitaxial layer 3. In order to form a base extraction region 4, an opening part 12 is made only in an impurity introduction part; then, in order to form a P-type collector region, an opening 13 is made only in the impurity introduction part; in addition, a collector diffusion region 5 is formed. An N-type impurity layer to be used as a base diffusion region is formed on the opposite side of the thick SiO2 film 8 at a concentration which is higher than that of the region and at a depth so as to cross it. Then, a P-type impurity layer to be used as an emitter diffusion region 7 is formed from an opening 14 at a concentration which is higher than a base impurity concentration. Lastly, windows are opened in the thin SiO2 film 9 on each Si surface of the collector diffusion region 5, the base diffusion region 6 and the emitter diffusion region 7; contact windows 15-17 are formed; individual electrodes 18-20 are formed. |
