| 摘要 |
PURPOSE:To make a layout size of a bipolar transistor small and to match this size with a layout size of a MOS transistor satisfactorily by a method wherein an electrode to supply electricity to a collector is arranged every n pieces of a pair of a base and an emitter for the bipolar transistor. CONSTITUTION:A collector common to bipolar transistors Qm, Q1-Qn is formed of an n<+> type high-concentration buried layers CB and an n-type collector region C on a p-type substrate. P-type bases B and n-type emitters E are formed inside this collector C; npn bipolar transistors are formed. Collector electrodes C1, C2 are extracted from high-concentration layers CE for electrode extraction use every n pieces of bipolar transistors; they are connected to other devices by using wiring parts (l) in the same manner as base electrodes B1-Bn, Bm and emitter electrodes E1-En, Em. Since the collector electrodes are formed every n pieces of bipolar transistors, a layout size in the transverse direction can be made small. |
