| 摘要 |
PURPOSE:To obtain a capacitor having large capacitance without increasing an occupying area by boring a vertically deep trench when the trench type and laminating type capacitor is formed to a DRAM, shaping the lower electrode of the capacitor, an insulating film and an upper electrode onto the sidewall of the trench and filling a formed void width polycrystalline Si. CONSTITUTION:A field oxide film 2, an end section of which is thickened, is shaped to the surface of a semiconductor substrate 1 and a thin gate oxide film 3 into a region surrounded by the film 2, gate electrodes 4 are included into the film 2 and a gate electrode 24 is also formed onto the film 3, and source-drain regions 5 are shaped respectively while being positioned on both sides of the electrode 4 on the film 3. These electrodes 4 are coated with the laminates of oxide films 6 and nitride films 7, and BSPG films 8 are applied onto the laminates. Trenches for contacts are bored at central sections while being made to correspond to the regions 5 and trenches for capacitors near the regions 5, the trenches for the contacts are filled with polycrystalline Si layers 13 while polycrystalline Si lower electrodes 12, insulating films 14 and polycrystalline Si upper electrodes 15 are shaped onto the wall surfaces of the trenches for the capacitors, and formed voids are filled with Si layers 16. |
