| 摘要 |
PURPOSE:To obtain the titled device guaranteed with stable action of the circuit by the design by a method wherein another side third conductive diffusion region is provided at the position opposing to a second diffusion region and having the distance same as the distance between a first diffusion region and the second diffusion region from the first diffusion region. CONSTITUTION:The P type diffusion region 6 having the same length as facing length of the transistor B to the injector 2 is provided in the region on the opposite side to the transistor B in relation to the injector 2 at the same distance from the injector 2, an N type high concentration diffusion region 7 is formed at the neighborhood to be connected to the P type diffusion region 6 by a connection 8, and the P type diffusion region 6 is connected to an N type substrate 1. The region 6 acts similarly to a transistor D to a transistor A, and takes in an injector current. The injector current of the transistor B becomes equal to the injector currents of other gates, and when the current amplification factor (hFE) falls, a problem that the gate part thereof presents no action at first is not generated. |
