| 摘要 |
PURPOSE:To make it possible to form the resist film with a prescribed film thickness and pattern dimension, without generating the striation in the resist film by incorporating the naphthoquinone diazide sulfonate (LMR) of a novolak resin, and gamma-butylolactone in an amount of 12-50wt.% per the LMR, in an org. solvent respectively. CONSTITUTION:The naphthoquinone diazide sulfonate (LMR) of the novolak resin is dissolved in a mixed solution obtd. by mixing the gamma-butylolactone in the org. solvent so as to be 15-50wt.% of the gamma-butylolactone based on the LMR. In this case, the org. solvent is preferably composed of a methyl cellosolve acetate. Thus, the resist film obtd. by applying the org. solution of the methyl cellosolve acetate on an undercoat layer by dropping said solution on a rotating undercoat, does not cause the striation and the changes of the film thickness of the resist film, and the variation in pattern dimension do not occur at the time of forming a pattern. |
