| 发明名称 |
METHOD FOR FORMING THE INSULATING LAYER OF A SEMICONDUCTOR DEVICE |
| 摘要 |
An insulating layer is formed on a polycrystalline silicon layer by thermally oxidising the polycrystalline silicon layer using an oxidising atmosphere comprising an inert gas. |
| 申请公布号 |
DE3177102(D1) |
申请公布日期 |
1989.10.19 |
| 申请号 |
DE19813177102 |
申请日期 |
1981.05.19 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
YAMAMOTO, TAKASHI |
| 分类号 |
H01L21/768;H01L21/316;H01L21/321;(IPC1-7):H01L21/316;H01L21/31 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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