发明名称 |
ION SENSOR |
摘要 |
An ion sensor (30) includes a redox layer (8) covering at least part of a wiring (7a) extended from an isolated gate (7) or the gate of a junction FET, and an ion-sensitive layer (9) covering the surface of the redox layer. The ion sensor exhibits excellent noise characteristics or high-speed operation characteristics owing to the use of the junction FET, and is not affected by moisture or visible light owing to its isolated gate construction. Concentrations of a variety of ions can also be measured simultaneously by using a plurality of junction FET's. |
申请公布号 |
WO8909932(A1) |
申请公布日期 |
1989.10.19 |
申请号 |
WO1989JP00406 |
申请日期 |
1989.04.14 |
申请人 |
TERUMO KABUSHIKI KAISHA |
发明人 |
SHIMOMURA, TAKESHI;YAMAGUCHI, SHUICHIRO;KATSUBE, TERUAKI;OYAMA, NOBORU |
分类号 |
G01N27/414;(IPC1-7):G01N27/30 |
主分类号 |
G01N27/414 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|