发明名称 ION SENSOR
摘要 An ion sensor (30) includes a redox layer (8) covering at least part of a wiring (7a) extended from an isolated gate (7) or the gate of a junction FET, and an ion-sensitive layer (9) covering the surface of the redox layer. The ion sensor exhibits excellent noise characteristics or high-speed operation characteristics owing to the use of the junction FET, and is not affected by moisture or visible light owing to its isolated gate construction. Concentrations of a variety of ions can also be measured simultaneously by using a plurality of junction FET's.
申请公布号 WO8909932(A1) 申请公布日期 1989.10.19
申请号 WO1989JP00406 申请日期 1989.04.14
申请人 TERUMO KABUSHIKI KAISHA 发明人 SHIMOMURA, TAKESHI;YAMAGUCHI, SHUICHIRO;KATSUBE, TERUAKI;OYAMA, NOBORU
分类号 G01N27/414;(IPC1-7):G01N27/30 主分类号 G01N27/414
代理机构 代理人
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